STGWT60H65DFB - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGWT60H65DFB
Manufacturer

ST Microelectronics
ChipWorker Part#

CW40891371
Category

IGBT Transistor, IGBT Module
Package

TO-3-3
Description

Trans IGBT Chip N-CH 650V 80A 375000mW 3Pin(3+Tab) TO-3P Tube
Documentation

Datasheet

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STGWT60H65DFB Specifications

Attribute	Attribute Value

Part Number	STGWT60H65DFB
Manufacturer	ST Microelectronics
ChipWorker Part#	CW40891371
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Power Dissipation	375000 mW
Input Capacitance	7792 pF
Breakdown Voltage (Collector to Emitter)	650 V
Thermal Resistance	50 ℃/W
Reverse recovery time	60 ns
Input Power (Max)	375 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	375 W
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Size-Length	15.8 mm
Size-Width	5 mm
Size-Height	20.1 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This powerful and secure STGWT60H65DFB IGBT transistor from STMicroelectronics will make sure your circuit works properly. Its maximum power dissipation is 375000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. It is made in a single configuration.

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