STP120NF10 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STP120NF10
Manufacturer

ST Microelectronics
ChipWorker Part#

CW8260580
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220 N-CH 100V 110A
Documentation

Datasheet

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STP120NF10 Specifications

Attribute	Attribute Value

Part Number	STP120NF10
Manufacturer	ST Microelectronics
ChipWorker Part#	CW8260580
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	100 V
Current Rating	120 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.009 Ω
Polarity	N-Channel
Power Dissipation	312 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	110 A
Rise Time	90 ns
Input Capacitance (Ciss)	5200pF @25V(Vds)
Input Power (Max)	312 W
Fall Time	68 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	312000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STP120NF10 is a N-channel Power MOSFET, STMicroelectronics unique STripFET™ process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom and computer application. It is also intended for any applications with low gate drive requirements.
Exceptional dv/dt Capability
100% Avalanche Tested
Application Oriented Characterization

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