TIP117 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP117
Manufacturer

ST Microelectronics
ChipWorker Part#

CW65416639
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans Darlington PNP 100V 2A 2000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

TIP117 Global Supplier

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TIP117 Specifications

Attribute	Attribute Value

Part Number	TIP117
Manufacturer	ST Microelectronics
ChipWorker Part#	CW65416639
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	-100 V
Current Rating	-2.00 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	2 W
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	1000 @1A, 4V
Input Power (Max)	2 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Do you need a device that can yield much higher current gains? Thanks to STMicroelectronics, the PNP TIP117 Darlington transistor can amplify a current to meet your needs. This product"s maximum continuous DC collector current is 2 A, while its minimum DC current gain is 1000@1A@4 V|500@2A@4V. It has a maximum collector emitter saturation voltage of 2.5@8mA@2A V. This Darlington transistor array"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.

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