IKW25N120H3FKSA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IKW25N120H3FKSA1
Manufacturer

Infineon
ChipWorker Part#

CW46335103
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

IGBT Single Transistor, 25A, 2.4V, 326W, 1.2kV, TO-247, 3Pins
Documentation

Datasheet

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IKW25N120H3FKSA1 Specifications

Attribute	Attribute Value

Part Number	IKW25N120H3FKSA1
Manufacturer	Infineon
ChipWorker Part#	CW46335103
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	326 W
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	290 ns
Input Power (Max)	326 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	326000 mW
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Size-Length	16.13 mm
Size-Width	5.21 mm
Size-Height	21.1 mm
Operating Temperature	-40℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IKW25N120H3 is a High Speed IGBT in Trench and field-stop technology with soft, fast recovery anti-parallel diode. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.
Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
Low switching losses for high efficiency
Fast switching behaviour with low EMI emissions
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
Short-circuit capability
Excellent performance
Low switching and conduction losses
Very good EMI behaviour
Small gate resistor for reduced delay time and voltage overshoot
Best-in-class IGBT efficiency and EMI behaviour
Packaged with and without freewheeling diode for increased design freedom
Green product
Halogen-free

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