IXGT6N170 ,IGBT Transistor, IGBT Module - IXYS Semiconductor
The pictures are for reference only, and the specific specifications can be found in the product manual.
Popularity Score
68 points
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Part NoIXGT6N170
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ManufacturerIXYS Semiconductor
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ChipWorker Part#CW79556668
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CategoryIGBT Transistor, IGBT Module
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PackageTO-268-3
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DescriptionTrans IGBT Chip N-CH 1700V 6A 75000mW 3Pin(2+Tab) TO-268
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DocumentationDatasheet
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Ships fromMoscow
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Наличие42 pcs In Stock
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Estimated Price$ 3.93
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IXGT6N170 Specifications
Consulting Engineer >>| Attribute | Attribute Value | |
|---|---|---|
| Part Number | IXGT6N170 | |
| Manufacturer | IXYS Semiconductor | |
| ChipWorker Part# | CW79556668 | |
| Category | IGBT Transistor, IGBT Module | |
| Documentation | Datasheet | |
| Mounting Style | Surface Mount | |
| Number of Pins | 3 Pin | |
| Case/Package | TO-268-3 | |
| Power Dissipation | 75000 mW | |
| Breakdown Voltage (Collector to Emitter) | 1700 V | |
| Input Power (Max) | 75 W | |
| Operating Temperature (Max) | 150 ℃ | |
| Operating Temperature (Min) | -55 ℃ | |
| Power Dissipation (Max) | 75000 mW | |
| expand all | ||
| Operating Temperature | -55℃ ~ 150℃ (TJ) | |
| Product Lifecycle Status | Active | |
| Packaging | Tube | |
| RoHS | RoHS Compliant | |
| Lead-Free Status | Lead Free | |
| ECCN Code | EAR99 |
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Product Description
- This IXGT6N170 IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 75000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
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