NSS12100XV6T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NSS12100XV6T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW9048663
Category

BJT Transistor, BJT
Package

SOT-563-6
Description

SOT-563 PNP 12V 1A
Documentation

Datasheet

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NSS12100XV6T1G Specifications

Attribute	Attribute Value

Part Number	NSS12100XV6T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW9048663
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-563-6
Halogen Free Status	Halogen Free
Number of Positions	6 Position
Polarity	PNP
Power Dissipation	500 mW
Input Capacitance	50 pF
Gain Bandwidth Product	100 MHz
Breakdown Voltage (Collector to Emitter)	12 V
Continuous Collector Current	1A
hFE Min	100 @500mA, 2V
Input Power (Max)	500 mW
DC Current Gain (hFE)	200
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	500 mW
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Size-Length	1.7 mm
Size-Width	1.3 mm
Size-Height	0.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The NSS12100XV6T1G is a 1A PNP bipolar Transistor designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. It is miniature surface-mount device featuring ultra-low saturation voltage VCE(sat) and high current gain capability.

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