BDW42 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BDW42
Manufacturer

ON Semiconductor
ChipWorker Part#

CW128496637
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220-3 NPN 100V 15A
Documentation

Datasheet

BDW42 Global Supplier

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BDW42 Specifications

Attribute	Attribute Value

Part Number	BDW42
Manufacturer	ON Semiconductor
ChipWorker Part#	CW128496637
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Case/Package	TO-220-3
Voltage Rating (DC)	100 V
Current Rating	15.0 A
Polarity	NPN
Power Dissipation	85 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	15A
hFE Min	1000 @5A, 4V
Input Power (Max)	85 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
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Size-Length	10.28 mm
Size-Width	4.82 mm
Size-Height	9.28 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
Minimum Packing Quantity	50
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

This series of plastic, medium-power NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. The BDW42, BDW46 and BDW47 are complementary devices.
Features
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High DC Current Gain - hFE = 2500 (typ.) @ IC = 5.0 Adc.
Collector Emitter Sustaining Voltage @ 30 mAdc:
VCEO(sus) = 80 Vdc (min.) BDW46
VCEO(sus) = 100 Vdc (min.) - BDW42/BDW47
Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc
VCE(sat) = 3.0 Vdc (max.) @ IC = 10.0 Adc
Monolithic Construction with Built-In Base Emitter Shunt resistors
TO-220AB Compact Package
Pb-Free Packages are Available

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